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SI3441BDV New Product Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) - 20 0.130 @ VGS = - 2.5 V - 2.45 rDS(on) (W) 0.090 @ VGS = - 4.5 V ID (A) - 2.9 (4) S TSOP-6 Top View 1 6 (3) G 3 mm 2 5 3 4 (1, 2, 5, 6) D P-Channel MOSFET 2.85 mm ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Diode Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C PD TJ, Tstg TA = 25_C ID TA = 70_C IDM IS - 1.0 1.25 0.8 - 55 to 150 - 2.35 - 16 - 0.72 0.86 0.55 W _C - 1.95 A Symbol VDS VGS 5 secs Steady State - 20 "8 Unit V - 2.9 - 2.45 THERMAL RESISTANCE RATINGS Parameter t v 5 sec Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. For SPICE model information via the Worldwide Web: http://www. vishay.com/www/product/spice.htm. Document Number: 72028 S-03669--Rev. B, 07-Apr-03 www.vishay.com Steady State Steady State RthJA RthJF Symbol Typical 80 120 70 Maximum 100 145 85 Unit _C/W C/W 1 SI3441BDV Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current VGS(th) IGSS IDSS VDS = VGS, ID = - 250 mA VDS = 0 V, VGS = "8 V VDS = - 20 V, VGS = 0 V VDS = - 20 V, VGS = 0 V, TJ = 70_C VDS = - 5 V, VGS = - 4.5 V ID( ) D(on) VDS = - 5 V, VGS = - 2.5 V VGS = - 4.5 V, ID = - 3.3 A rDS( ) DS(on) gfs VSD VGS = - 2.5 V, ID = - 2.9 A VDS = - 10 V, ID = - 3.3 A IS = - 1.6 A, VGS = 0 V - 10 -4 0.070 0.098 8.0 - 0.8 - 1.2 0.090 0.130 A - 0.45 - 0.85 "100 -1 -5 V nA mA Symbol Test Condition Min Typ Max Unit On-State On State Drain Currenta Drain-Source On-State Drain Source On State Resistancea Forward Transconductancea Diode Forward Voltagea W S V Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = - 1.6 A, di/dt = 100 A/ms VDD = - 10 V, RL = 10 W ID ^ - 1.0 A, VGEN = - 4.5 V, RG = 6 W VDS = - 10 V, VGS = - 4.5 V, ID = - 3.3 A 5.2 0.8 1.5 15 55 30 40 50 25 85 45 60 80 ns 8.0 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 20 VGS = 4.5 thru 3.5 V 16 I D - Drain Current (A) I D - Drain Current (A) 2.5 V 12 3V 16 20 Transfer Characteristics TC = - 55_C 25_C 125_C 12 8 2V 8 4 1.5 V 1V 0 0 1 2 3 4 5 4 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) www.vishay.com 2 Document Number: 72028 S-03669--Rev. B, 07-Apr-03 SI3441BDV New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.30 r DS(on) - On-Resistance ( W ) 1000 Vishay Siliconix Capacitance C - Capacitance (pF) 0.24 800 0.18 600 Ciss 400 0.12 VGS = 2.5 V VGS = 4.5 V 0.06 200 Crss Coss 0.00 0 4 8 12 16 20 0 0 4 8 12 16 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 5 V GS - Gate-to-Source Voltage (V) VDS = 10 V ID = 3.3 A 4 1.5 1.4 r DS(on) - On-Resistance (W) (Normalized) 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0 0 1 2 3 4 5 6 Qg - Total Gate Charge (nC) 0.6 - 50 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 3.3 A 3 2 1 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 20 TJ = 150_C I S - Source Current (A) 10 r DS(on) - On-Resistance ( W ) 0.24 0.30 On-Resistance vs. Gate-to-Source Voltage ID = 3.3 A 0.18 TJ = 25_C 0.12 0.06 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 72028 S-03669--Rev. B, 07-Apr-03 www.vishay.com 3 SI3441BDV Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.6 10 Single Pulse Power 0.4 V GS(th) Variance (V) ID = 250 mA Power (W) 8 0.2 6 - 0.0 4 TA = 25_C - 0.2 2 - 0.4 - 0.6 - 50 - 25 0 25 50 75 100 125 150 0 10 -2 10 -1 1 Time (sec) 10 100 600 TJ - Temperature (_C) Safe Operating Area 100 rDS(on) Limited 10 I D - Drain Current (A) IDM Limited 10 ms 100 ms 1 ms 1 10 ms TA = 25_C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 100 ms 1s dc, 100 s, 10 s 0.1 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 120_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted t1 t2 10 100 600 www.vishay.com 4 Document Number: 72028 S-03669--Rev. B, 07-Apr-03 SI3441BDV New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 Vishay Siliconix 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 Document Number: 72028 S-03669--Rev. B, 07-Apr-03 www.vishay.com 5 |
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